PRODUCTION OF PHOTOSENSITIVE DEVICES BY MONITORING AND CONTROLLING THE PARAMETRES OF SEMICONDUCTOR STRUCTURES
Keywords:
Semiconductor, physical parameters, photoelectric parameters, photosensitive devices.Abstract
The multispectral photosensitive device includes at least one opaque base layer; wherein each main layer has at least two sides, and at least two sides are provided with groups of photosensitive pixels, each group of photosensitive pixels is used to receive light of any spectrum coming from the front direction of the side. Alternatively, the multispectral photosensitive device includes at least one transparent base layer. In this case, each main layer has at least two sides, where at least two sides are provided with photosensitive pixel groups, each photosensitive pixel group is used to receive light of the spectrum of interest coming from the front or rear direction, the side where the photosensitive pixel group is located.
References
Ю.Р. Носов, В.А. Шилин. Основы физики приборов с зарядовой связью. — М.: Наука, 1986. — 318 с.
пер. с англ. / Под ред. М. Хоувза, Д. Моргана. Приборы с зарядовой связью. — М.: Энергоиздат, 1981. — 372 с.
Секен К., Томпсет М. Приборы с переносом заряда/ Пер. с англ. Под ред. В.В. Поспелова, Р.А. Суриса. — М.: Мир, 1978. — 327 с.
под ред. П. Йесперса, Ф. Ван де Виле, М. Уайта ; пер. с англ. под ред. Р. А. Суриса. Полупроводниковые формирователи сигналов изображения. — М.: Мир, 1979. — 573 с.
