HETEROJUNCTION LASERS
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Heterojunctions, laser diode, heavily doped semiconductor, population inversion, electron injection.Abstrak
The main parameters of a heterojunction laser diode, such as the emission frequency spectrum (optical modes), threshold current, output radiation power, and operating efficiency, are considered. A simplified formula for the radiation intensity of a heterostructure laser is obtained. It is shown that, due to reflection from the ends, the light repeatedly passes through the active region and is predominantly amplified by stimulated emission. A standing wave is established inside the laser diode with an integer number of half-waves between the end surfaces.
Iqtiboslar
Krylov K. I., Prokopenko V. T., Tarlykov V. A. Fundamentals of laser technology. Engineering 1990.
Eliseev P. G. Introduction to the physics of injection lasers. M: Nauka 1983.
Handbook of laser technology. M: Energoatomizdat, 1991.
V. F. D’yakov and L. V. Tarasov, Optical coherent radiation. Moscow: Soviet radio, 1974.
B. F. Fedorov, Lasers. Fundamentals of device and application. M.: DOSAAF USSR, 1988.
N. Matveev, Optics. Moscow: Higher school, 1985.
