FEATURES OF SEMICONDUCTOR LASERS

Авторы

  • Gulmira Teshaboeva Master of Andijan state university, Автор
  • Shukrulla Ermatov Docent of Andijan state university. Автор

Ключевые слова:

Semiconductor lasers, acceptors, donors, impurity level, gallium arsenide.

Аннотация

This article discusses the operation principle of semiconductor lasers. With the help of the band diagram, a distinctive feature of all semiconductor laser materials is explained, which is a very high gain of electromagnetic radiation compared to other laser materials (crystals, glasses, liquids, gases). Due to this, it is possible to fulfill the generation condition for miniature semiconductor samples.

Библиографические ссылки

KrylovK. I., ProkopenkoV. T., Tarlykov V. A. Fundamentals of laser technology. Engineering 1990.

EliseevP. G. Introduction to the physics of injection lasers. M: Nauka 1983.

Handbook of laser technology. M: Energoatomizdat, 1991.

V. F. D’yakov and L. V. Tarasov, Optical coherent radiation. Moscow: Soviet radio, 1974.

B. F. Fedorov, Lasers. Fundamentals of device and application. M.: DOSAAF USSR, 1988.

A. N. Matveev, Optics. Moscow: Higher school, 1985.

Опубликован

2023-04-10

Выпуск

Том 3 № 4 (2023): Евразийский журнал медицинских и естественных наук

Раздел

Articles

Лицензия

Лицензия Creative Commons

Это произведение доступно по лицензии Creative Commons «Attribution» («Атрибуция») 4.0 Всемирная.

Как цитировать

FEATURES OF SEMICONDUCTOR LASERS. (2023). Евразийский журнал медицинских и естественных наук, 3(4), 169-175. https://in-academy.uz/index.php/EJMNS/article/view/9533