FEATURES OF SEMICONDUCTOR LASERS

Authors

  • Gulmira Teshaboeva Master of Andijan state university, Author
  • Shukrulla Ermatov Docent of Andijan state university. Author

Keywords:

Semiconductor lasers, acceptors, donors, impurity level, gallium arsenide.

Abstract

This article discusses the operation principle of semiconductor lasers. With the help of the band diagram, a distinctive feature of all semiconductor laser materials is explained, which is a very high gain of electromagnetic radiation compared to other laser materials (crystals, glasses, liquids, gases). Due to this, it is possible to fulfill the generation condition for miniature semiconductor samples.

References

KrylovK. I., ProkopenkoV. T., Tarlykov V. A. Fundamentals of laser technology. Engineering 1990.

EliseevP. G. Introduction to the physics of injection lasers. M: Nauka 1983.

Handbook of laser technology. M: Energoatomizdat, 1991.

V. F. D’yakov and L. V. Tarasov, Optical coherent radiation. Moscow: Soviet radio, 1974.

B. F. Fedorov, Lasers. Fundamentals of device and application. M.: DOSAAF USSR, 1988.

A. N. Matveev, Optics. Moscow: Higher school, 1985.

Published

2023-04-10

Issue

Vol. 3 No. 4 (2023): Евразийский журнал медицинских и естественных наук

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

FEATURES OF SEMICONDUCTOR LASERS. (2023). Eurasian Journal of Medical and Natural Sciences, 3(4), 169-175. https://in-academy.uz/index.php/EJMNS/article/view/9533