КРЕМНИЙГА ЛЕГИРЛАНГАН НИКЕЛ ВА СЕЛЕН БИНАР КОМПЛЕКСЛАРНИНГ ЎЗАРО ТАЪСИРЛАШУВИНИ ТАДҚИҚ ЭТИШ

Main Article Content

Аннотация:

Ni va Se atomlari bilan legirlangan kremniyni taqqiqot natijalari keltirilgan. Nikelning kiritilishi kremniy yuzasiga changlatib olinadi va undan so’ng T=1150˚C da 0,5 soat davomida "past haroratli" diffuziya usulida amalga oshirildi. Ni va Se legirlangan namunalarga qo’shimcha termik ishlov berish xuddi shunday amalga oshirildi (T = 820˚C, 0,5 soat davomida). Namunalarning tarkibi SEM yordamida o'rganildi. Si<Ni, Se> xossalarining o'zgarishi kremniyning kristall panjarasida Nikel va selen kirishma atomlarining binar komplekslarning hosil bo'lishi bilan izohlanadi.

Article Details

Как цитировать:

Зикриллаев X., Турсунов, М., & Қаршиев, Ш. (2022). КРЕМНИЙГА ЛЕГИРЛАНГАН НИКЕЛ ВА СЕЛЕН БИНАР КОМПЛЕКСЛАРНИНГ ЎЗАРО ТАЪСИРЛАШУВИНИ ТАДҚИҚ ЭТИШ. Евразийский журнал академических исследований, 2(6), 497–499. извлечено от https://in-academy.uz/index.php/ejar/article/view/2238

Библиографические ссылки:

Bakhadyrkhanov M.K., Askarov Sh.I, and Norkulov N. Some Features of Chemical Interaction between a Fast Diffusing Impurity and a Group VI Element in Silicon. // Physics state solid. 1994. No. 142. pp 339-346.

Bakhadyrkhanov M.K., Iliev Kh.M, Тursunov M.O., Isamov S.B., Koveshnikov S.V., Madjitov M. Kh. Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion // Inorganic Materials. 2021. Vol. 57, No. 7, pp. 655-662.

Bakhadyrkhanov M.K., Isamov S.B., Zikrillaev N.F., Тursunov M.O. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms // Semiconductors, 2021, Vol. 55, No. 6, pp. 636–639

Bakhadyrkhanov M.K., Mavlonov G.Kh., Isamov S.B., Iliev Kh.M., Ayupov K.S., Saparniyazova Z.M., and Tachilin S.A. Transport Properties of Silicon Doped with Manganese via Low Temperature Diffusion // Inorganic Materials. 2011. Vol. 47, No. 5, pp. 479-483.

Iliev Kh.M, Тursunov M.O., Koveshnikov S.V., Khudaynazarov Z.B. Research of properties of silicon with binary nanoclusters with participation of Mn and Se atoms // Semiconductor Physics and Microelectronics. 2020, Vol. 2, Issue 2. pp. 59–62.

Ismailov K.А, Iliev X.M, Tursunov M.O, Ismaylov B.K. Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon. // Semiconductor Physics, Quantum Electronics & Optoelectronics. 2021, Vol. 24, No. 3, pp. 255–260.