DIFFICULTIES FACED BY STUDENTS WHILE LEARNING FOREIGN LANGUAGES

Main Article Content

Аннотация:

The article is devoted to the investigation of language learning through interactive games in EFL(English as a Foreign Language) classes. The article also focuses on the educational benefits as well as on recommendations how to incorporate games into a learning environment. It is considered that using game activities in the lessons not only aid to improve the students’ vocabulary and knowledge of English, but also it makes lessons much more effective, entertaining and enjoyable. Learning vocabulary is a complicated task for all learners, so games can encourage them to acquire the target language much more easily.

Article Details

Как цитировать:

Tilavova , M. ., & Azimova, M. . (2024). DIFFICULTIES FACED BY STUDENTS WHILE LEARNING FOREIGN LANGUAGES. Евразийский журнал академических исследований, 4(7 (Special Issue), 646–648. извлечено от https://in-academy.uz/index.php/ejar/article/view/35872

Библиографические ссылки:

Demirbek M.Yilmaz E.Tamer.S (2010), Second language instructors’ perspectives. About the use of educational games. Social and Behavioral Sciences. 9,717-721.

Efendi.E (2013). The use of social networks in educational computer-game based foreign language learning. Social and Behavioral Sciences,9,1497-1503

Sorayaizeazar. A (2012). The effect of games on EFL learner’s vocabulary learning strategies. International Journal of Applied and Basic Sciences, 1(2). 252-256.

Turgut.Y.Irgin.P.(2009), Young learners’ language learning via computer games. Social and Behavioral Sciences. 1.760-764

Nasriddinov, S.S., Esbergenov, D.M. A Study of Complex Defect Formation in Silicon Doped With Nickel, Russian Physics Journal, 2023, 65(9), pp. 1559–1563, https://doi.org/10.1007/s11182-023-02801-x

Nasriddinov, S.S. Investigation of temperature sensors based on Si

, Journal of Nano- and Electronic Physics, 2015, 7(3), 03037

Rysbaev, A.S., Tashatov, A.K., Dzhuraev, S.X., Arzikulov, G., Nasriddinov, S.S. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon, Journal of Surface Investigation, 2011, 5(6), pp. 1193–1196, https://doi.org/10.1134/S1027451011100193

Bakhadyrkhanov, M.K., Valiev, S.A., Nasriddinov, S.S., Egamov, U. Features of thermal properties of strongly compensated Si, Inorganic Materials, 2009, 45(11), pp.1210–1212, https://doi.org/10.1134/S0020168509110028

Bakhadyrkhanov, M.K., Iliev, Kh.M., Tachilin, S.A., Nasriddinov, S.S., Abdurakhmanov, B.A. Impurity photovoltaic effect in silicon with multicharge Mn clusters, Applied Solar Energy (English translation of Geliotekhnika), 2008, 44(2), pp.132–134, https://doi.org/10.3103/S0003701X08020151

Normuradov, M.T., Tashatov, A.K., Rysbaev, A.S., ... Kholikov, Yu.D., Nasriddinov, S.S. Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions, Journal of Communications Technology and Electronics, 2007, 52(8), pp.898–900, https://doi.org/10.1134/S1064226907080104

Rysbaev, A.S., Nasriddinov, S.S., Normuradov, M.T., Umirzakov, B.E., Influence of high doze ion implantation of B and P on the state of the Si(111) surface, Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2002, 66(8), pp.1215–1219

Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of Silicide Films Formed by Low-Energy Implantation of Metal Ions into Silicon, Journal of Communications Technology and Electronics, 1997, 42(1), pp.114–117

Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S., The Effect of Implantation of Low-Energy Ions on the Density of States of Valence Electrons in Silicon, Journal of Communications Technology and Electronics, 1997, 42(2), pp.220–222

Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S. The effect of implantation of low-energy ions on the density of states of valence electrons in silicon, Radiotekhnika i Elektronika, 1997, 42(2), pp.240–242

Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of silicide films formed by low-energy implantation of metal ions into silicon, Radiotekhnika i Elektronika, 1997, 42(1), pp, 125–128