METHODOLOGICAL SIGNIFICANCE OF THE APPLICATION OF STEAM EDUCATIONAL TECHNOLOGY IN ELEMENTARY SCHOOL CLASSES

Main Article Content

Аннотация:

This article discusses the importance of STEAM educational technology in primary education in teaching students to think creatively.

Article Details

Как цитировать:

Urokova , U. (2024). METHODOLOGICAL SIGNIFICANCE OF THE APPLICATION OF STEAM EDUCATIONAL TECHNOLOGY IN ELEMENTARY SCHOOL CLASSES. Евразийский журнал академических исследований, 4(7 (Special Issue), 656–658. извлечено от https://in-academy.uz/index.php/ejar/article/view/35875

Библиографические ссылки:

Ergasheva G. B. The role of innovative pedagogical technologies in the development of Science and education in modern society //Scientific progress. –2021.

Rajabova L. Advanced methods for solving mathematical problems based on the Steam education program / / sentre nauchnix publikatsiy (Bukhdu. Face). – 2020. - t. 1. – №. 1.

Dilnoza Furqatovna Khalilova. (2023). Results that give an innovative educational environment in improving professional competence regarding the development of social relations in students. Conferencea

Makhmudov A. X., Abdurakhmanov Z. B. Achievements and challenges of using modern digital technologies in education //Academic research in educational sciences. – 2021. - T. 2. – №. CSPI conference

Akhmedova M.E (in co-authorship) pedagogical skill and professional competence of medical pedagogy. Educational-methodological manual T.: "Medical Publishing House LLC, 2021-62-63b.(126)

Akhmedova M.E. The module is the scientific and theoretical basis for creating independent assignments in the credit system (on the example of linguistic Sciences). Monograph. "Medical publishing house of Printing", LLC. Tashkent - 2022. 173 PP.

Akhmedova M. (in co –authorship) - pedagogy. Tutorial. T.:, A science and technology publisher. 2018. — 393 b (102-b).

Akhmedova M.E.U.A.Tashkenbaeva., E.Suyunova general pedagogical theory and practice (textbook) – T.: Medical Press, 2022.

Nasriddinov, S.S., Esbergenov, D.M. A Study of Complex Defect Formation in Silicon Doped With Nickel, Russian Physics Journal, 2023, 65(9), pp. 1559–1563, https://doi.org/10.1007/s11182-023-02801-x

Nasriddinov, S.S. Investigation of temperature sensors based on Si

, Journal of Nano- and Electronic Physics, 2015, 7(3), 03037

Rysbaev, A.S., Tashatov, A.K., Dzhuraev, S.X., Arzikulov, G., Nasriddinov, S.S. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon, Journal of Surface Investigation, 2011, 5(6), pp. 1193–1196, https://doi.org/10.1134/S1027451011100193

Bakhadyrkhanov, M.K., Valiev, S.A., Nasriddinov, S.S., Egamov, U. Features of thermal properties of strongly compensated Si, Inorganic Materials, 2009, 45(11), pp.1210–1212, https://doi.org/10.1134/S0020168509110028

Bakhadyrkhanov, M.K., Iliev, Kh.M., Tachilin, S.A., Nasriddinov, S.S., Abdurakhmanov, B.A. Impurity photovoltaic effect in silicon with multicharge Mn clusters, Applied Solar Energy (English translation of Geliotekhnika), 2008, 44(2), pp.132–134, https://doi.org/10.3103/S0003701X08020151

Normuradov, M.T., Tashatov, A.K., Rysbaev, A.S., ... Kholikov, Yu.D., Nasriddinov, S.S. Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions, Journal of Communications Technology and Electronics, 2007, 52(8), pp.898–900, https://doi.org/10.1134/S1064226907080104

Rysbaev, A.S., Nasriddinov, S.S., Normuradov, M.T., Umirzakov, B.E., Influence of high doze ion implantation of B and P on the state of the Si(111) surface, Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2002, 66(8), pp.1215–1219

Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of Silicide Films Formed by Low-Energy Implantation of Metal Ions into Silicon, Journal of Communications Technology and Electronics, 1997, 42(1), pp.114–117

Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S., The Effect of Implantation of Low-Energy Ions on the Density of States of Valence Electrons in Silicon, Journal of Communications Technology and Electronics, 1997, 42(2), pp.220–222

Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S. The effect of implantation of low-energy ions on the density of states of valence electrons in silicon, Radiotekhnika i Elektronika, 1997, 42(2), pp.240–242

Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of silicide films formed by low-energy implantation of metal ions into silicon, Radiotekhnika i Elektronika, 1997, 42(1), pp, 125–128