PEDAGOGIKA OLIY TA’LIM MUASSASALARIDA SIRTQI TA’LIM JARAYONLARINI TASHKIL ETISH VA BOSHQARISH IJTIMOIY-PEDAGOGIK MUAMMO SIFATIDA

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Аннотация:

Maqolada pyedagogika oliy ta’lim muassasalari  sirtqi ta’lim  tizimida o‘quv jarayonlarini boshqarish xususiyatlari, muammolari solishtirma asosda o‘rganilishi va tahlil etilishi  orqali  uning sifatini oshirish yo‘nalishlari tavsiya etildi. Shuningdek, tadqiqot asosida pyedagogika oliy ta’lim muassasalari sirtqi ta’lim o‘quv jarayonlarini boshqarishda rivojlangan davlatlar tajribasidan foydalanib, mamlakatimiz pyedagogika oliy ta’lim muassasalarida sirtqi ta’lim o‘quv jarayonlarini boshqarishni sifat jihatidan yangi bosqichga ko‘tarish istiqboli tahlil qilingan.

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Tаshnazarov R. (2024). PEDAGOGIKA OLIY TA’LIM MUASSASALARIDA SIRTQI TA’LIM JARAYONLARINI TASHKIL ETISH VA BOSHQARISH IJTIMOIY-PEDAGOGIK MUAMMO SIFATIDA. Евразийский журнал академических исследований, 4(7 (Special Issue), 665–667. извлечено от https://in-academy.uz/index.php/ejar/article/view/35877

Библиографические ссылки:

2017-2021 yillarda O‘zbekiston Respublikasini rivojlantirishning beshta ustuvor yo‘nalishi bo‘yicha ¬Harakatlar strategiyasi, O‘zbekiston Respublikasi Prezidentining 2017 yil 7 fevraldagi PF-4947-sonli Farmoniga 1-ilova, IV. Ijtimoiy sohani rivojlantirishning ustuvor yo‘nalishlari, 4.4 va 4.5. Yoshlarga oid davlat siyosatini takomillashtirish, Toshkent 2017 yil.

Abduquddusov O. Kasb ta’limi o‘qituvchilarini tayyorlashga integrativ yondashuv. – T.: Fan, 2005, – 157 b.

Avliyoqulov N.X. Zamonaviy o‘qitish texnologiyalari. – T.: 2001.

Avliyoqulov N.X.O‘qitishning modul tizimi va pedagogik texnologiyasi amaliy asoslari. Uslubiy qo‘llanma. – Buxoro, 2001.

Arziqulova D.N. Kasbiy kamolotning psixologik o‘ziga xos xususiyatlari: Psix.fan.nom. … diss. avtoref. – T., 2002. – 22 b.

Turdiqulov E.O., Djurayev R.X. va boshqalar. Integratsiyalashgan ta’lim nazariyasi va amaliyoti. – T.: Sano-standart, 2009. – 176 b.

Kuzьmina N.V. Professionalizm lichnosti prepodavatelya / N.V. Kuzьmina. – M.: APN, 1990. – S.149.

Lobanov A.A. Osnovы professionalno-pedagogicheskogo obщyeniya: Ucheb, posobiye dlya stud. vыssh. ped. ucheb, zavedeniy - M.: Izdatelskiy syentr «Akademiya», 2002. - 192 s.

Nasriddinov, S.S., Esbergenov, D.M. A Study of Complex Defect Formation in Silicon Doped With Nickel, Russian Physics Journal, 2023, 65(9), pp. 1559–1563, https://doi.org/10.1007/s11182-023-02801-x

Nasriddinov, S.S. Investigation of temperature sensors based on Si

, Journal of Nano- and Electronic Physics, 2015, 7(3), 03037

Rysbaev, A.S., Tashatov, A.K., Dzhuraev, S.X., Arzikulov, G., Nasriddinov, S.S. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon, Journal of Surface Investigation, 2011, 5(6), pp. 1193–1196, https://doi.org/10.1134/S1027451011100193

Bakhadyrkhanov, M.K., Valiev, S.A., Nasriddinov, S.S., Egamov, U. Features of thermal properties of strongly compensated Si, Inorganic Materials, 2009, 45(11), pp.1210–1212, https://doi.org/10.1134/S0020168509110028

Bakhadyrkhanov, M.K., Iliev, Kh.M., Tachilin, S.A., Nasriddinov, S.S., Abdurakhmanov, B.A. Impurity photovoltaic effect in silicon with multicharge Mn clusters, Applied Solar Energy (English translation of Geliotekhnika), 2008, 44(2), pp.132–134, https://doi.org/10.3103/S0003701X08020151

Normuradov, M.T., Tashatov, A.K., Rysbaev, A.S., ... Kholikov, Yu.D., Nasriddinov, S.S. Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions, Journal of Communications Technology and Electronics, 2007, 52(8), pp.898–900, https://doi.org/10.1134/S1064226907080104

Rysbaev, A.S., Nasriddinov, S.S., Normuradov, M.T., Umirzakov, B.E., Influence of high doze ion implantation of B and P on the state of the Si(111) surface, Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2002, 66(8), pp.1215–1219

Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of Silicide Films Formed by Low-Energy Implantation of Metal Ions into Silicon, Journal of Communications Technology and Electronics, 1997, 42(1), pp.114–117

Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S., The Effect of Implantation of Low-Energy Ions on the Density of States of Valence Electrons in Silicon, Journal of Communications Technology and Electronics, 1997, 42(2), pp.220–222

Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S. The effect of implantation of low-energy ions on the density of states of valence electrons in silicon, Radiotekhnika i Elektronika, 1997, 42(2), pp.240–242

Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of silicide films formed by low-energy implantation of metal ions into silicon, Radiotekhnika i Elektronika, 1997, 42(1), pp, 125–128