BOSHLANG‘ICH SINF MATEMATIKA DARSLARIDA ZAMONAVIY MULTIMEDIA VOSITALARIDAN FOYDALANISHNING SAMARASI
Main Article Content
Аннотация:
Ushbu maqolada boshlamg‘ich sinf matematika darslarida foydalanish uchun kerak bo‘ladigan multimedia vositalari haqida ma’lumot berilgan. Boshlang‘ich sinf matematika darslarida foydalanish uchun juda muhum bo‘lgan multimedia vositalarining samarasi, foydalanish yo‘llari va turlari haqida ma’lumotlar keltrilgan.
Ключевые слова:
Article Details
Как цитировать:
Библиографические ссылки:
O‘zbekiston Respublikasi Prezidentining 2022-yil 28-yanvardagi PF-60-son “2022-2026-yillarga mo‘ljallangan yangi O‘zbekistonning taraqqiyot strategiyasi to‘g‘risida”gi Farmoni https://lex.uz/ru/dоcs/-3893445.
О‘zbekistоn Respublikаsi Prezidentining 2018-уil 5-sentаbr, PF-5538-sоn “Xаlq tа’limini bоshqаrish tizimini tаkоmillаshtirish bо‘уichа qо‘shimchа chоrа-tаdbirlаr tо‘g‘risidа”gi Fаrmоni. –T.:2018. mаnbа: https://lex.uz/ru/dоcs/-3893445
О‘zbekistоn Respublikаsi Prezidentining 2019 уil 29 аprel, PF-5712-sоn “О‘zbekistоn Respublikаsi xаlq tа’limi tizimini 2030 уilgаchа rivоjlаntirish kоnsуepsiуаsini tаsdiqlаsh tо‘g‘risidа”gi” Fаrmоni. –T.:2019. mаnbа: https://lex.uz/dоcs/-4312785
Maqsudov Ulug‘bek Qurbonovich, Eraliyev Yo‘ldoshali, Qosimova Gulzoda “TA’LIMDA MULTIMEDIALI VOSITALARDAN FOYDALANISHNING PEDAGOGIK XUSUSIYATLARI”, “Oriental Renaissance: Innovative, educational, natural and social sciences” jurnali, 2022-yil noyabr.
Suyarov Akram Musayevich, dotsent, PhD “Ta’lim tizimida interfaol multimedia vositalaridan foydalanishning imkonoyatlari «Новости образования: исследование в XXI веке», № 7 (100), часть 1 «Новости образования: исследование в XXI веке» февраль, 2023 г
Ta’limda axborot texnologiyalari o‘quv qo‘llanma / R.X. Ayupov. Nizomiy
nomidagi Toshkent davlat pedagogika universiteti. – T.: TDPU, 2020 yil
Nasriddinov, S.S., Esbergenov, D.M. A Study of Complex Defect Formation in Silicon Doped With Nickel, Russian Physics Journal, 2023, 65(9), pp. 1559–1563, https://doi.org/10.1007/s11182-023-02801-x
Nasriddinov, S.S. Investigation of temperature sensors based on Si
, Journal of Nano- and Electronic Physics, 2015, 7(3), 03037
Rysbaev, A.S., Tashatov, A.K., Dzhuraev, S.X., Arzikulov, G., Nasriddinov, S.S. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon, Journal of Surface Investigation, 2011, 5(6), pp. 1193–1196, https://doi.org/10.1134/S1027451011100193
Bakhadyrkhanov, M.K., Valiev, S.A., Nasriddinov, S.S., Egamov, U. Features of thermal properties of strongly compensated Si, Inorganic Materials, 2009, 45(11), pp.1210–1212, https://doi.org/10.1134/S0020168509110028
Bakhadyrkhanov, M.K., Iliev, Kh.M., Tachilin, S.A., Nasriddinov, S.S., Abdurakhmanov, B.A. Impurity photovoltaic effect in silicon with multicharge Mn clusters, Applied Solar Energy (English translation of Geliotekhnika), 2008, 44(2), pp.132–134, https://doi.org/10.3103/S0003701X08020151
Normuradov, M.T., Tashatov, A.K., Rysbaev, A.S., ... Kholikov, Yu.D., Nasriddinov, S.S. Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions, Journal of Communications Technology and Electronics, 2007, 52(8), pp.898–900, https://doi.org/10.1134/S1064226907080104
Rysbaev, A.S., Nasriddinov, S.S., Normuradov, M.T., Umirzakov, B.E., Influence of high doze ion implantation of B and P on the state of the Si(111) surface, Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2002, 66(8), pp.1215–1219
Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of Silicide Films Formed by Low-Energy Implantation of Metal Ions into Silicon, Journal of Communications Technology and Electronics, 1997, 42(1), pp.114–117
Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S., The Effect of Implantation of Low-Energy Ions on the Density of States of Valence Electrons in Silicon, Journal of Communications Technology and Electronics, 1997, 42(2), pp.220–222
Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S. The effect of implantation of low-energy ions on the density of states of valence electrons in silicon, Radiotekhnika i Elektronika, 1997, 42(2), pp.240–242
Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of silicide films formed by low-energy implantation of metal ions into silicon, Radiotekhnika i Elektronika, 1997, 42(1), pp, 125–128