XVI ASRDA TOSHKЕNTNING IJTIMOIY-IQTISODIY RIVOJLANISHI
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Аннотация:
Maqolada XVI asrda Buxoro xonligi tarkibida bo‘lgan Toshkent vohasi va Toshkent shahrining ijtimoiy-iqtisodiy rivojlanishida muhim ahamiyatga ega bo‘lgan iqlimi, geografik joylashuvi, sug‘orish inshootlari haqidagi ma’lumotlar manbalarga asoslangan holda ochib berilgan. Shuningdek, maqolada Shayboniylar sulolasi hukmronligi davrida Toshkentning ijtimoiy-siyosiy mavqei tahlil qilingan.
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Библиографические ссылки:
Zamonov A. Buxoro xonligida siyosiy va ijtimoiy-iqtisodiy jarayonlar. – Toshkent: “BAYOZ”, 2018. –B. 40-60.
Hofiz Tanish al-Buxoriy. Abdullanoma. 2-kitob. – B. 52.
Muhammadyor ibn Qatag‘on. Ko‘rsatilgan asar. – B. 319.
Seydi Ali Rais. Mir’otul mamolik. – T.: Fan, 1963. – B. 97-98.
Xoshimov A. Qosim Shayx Azizonning ijtimoiy-siyosiy faoliyatida sulhparvarlik // Toshkent Islom universiteti ilmiy-tahliliy axborotnomasi. – T., 2017. – №2. – B. 36-37.
Muhammad Haydar Mirzo. Tarixi Rashidiy. – Toshkent: Sharq, 2010. – B. 168-170.
O‘rinboyev A., Bo‘riyev O. Toshkent Muhammad Solih tavsifida (XIX asr). Toshkent.: “Fan”, 1983. - 44-bet.
Toshkent Muhammad Solih tavsifida. –B. 58 b.
Buryakov Y. F. Istoricheskaya topografiya..., .. 178.
O‘rinboyev A., Bo‘riyev O. Toshkent Muhammad Solih tavsifida (XIX asr). Toshkent.: “Fan”, 1983. –B. 48.
Toshkent Muhammad Solih tavsifida. –B. 59.
O‘rinboyev A., Bo‘riyev O. Toshkent Muhammad Solih tavsifida (XIX asr). Toshkent.: “Fan”, 1983. –B. 55.
Nasriddinov, S.S., Esbergenov, D.M. A Study of Complex Defect Formation in Silicon Doped With Nickel, Russian Physics Journal, 2023, 65(9), pp. 1559–1563, https://doi.org/10.1007/s11182-023-02801-x
Nasriddinov, S.S. Investigation of temperature sensors based on Si
, Journal of Nano- and Electronic Physics, 2015, 7(3), 03037
Rysbaev, A.S., Tashatov, A.K., Dzhuraev, S.X., Arzikulov, G., Nasriddinov, S.S. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon, Journal of Surface Investigation, 2011, 5(6), pp. 1193–1196, https://doi.org/10.1134/S1027451011100193
Bakhadyrkhanov, M.K., Valiev, S.A., Nasriddinov, S.S., Egamov, U. Features of thermal properties of strongly compensated Si, Inorganic Materials, 2009, 45(11), pp.1210–1212, https://doi.org/10.1134/S0020168509110028
Bakhadyrkhanov, M.K., Iliev, Kh.M., Tachilin, S.A., Nasriddinov, S.S., Abdurakhmanov, B.A. Impurity photovoltaic effect in silicon with multicharge Mn clusters, Applied Solar Energy (English translation of Geliotekhnika), 2008, 44(2), pp.132–134, https://doi.org/10.3103/S0003701X08020151
Normuradov, M.T., Tashatov, A.K., Rysbaev, A.S., ... Kholikov, Yu.D., Nasriddinov, S.S. Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions, Journal of Communications Technology and Electronics, 2007, 52(8), pp.898–900, https://doi.org/10.1134/S1064226907080104
Rysbaev, A.S., Nasriddinov, S.S., Normuradov, M.T., Umirzakov, B.E., Influence of high doze ion implantation of B and P on the state of the Si(111) surface, Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2002, 66(8), pp.1215–1219
Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of Silicide Films Formed by Low-Energy Implantation of Metal Ions into Silicon, Journal of Communications Technology and Electronics, 1997, 42(1), pp.114–117
Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S., The Effect of Implantation of Low-Energy Ions on the Density of States of Valence Electrons in Silicon, Journal of Communications Technology and Electronics, 1997, 42(2), pp.220–222
Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S. The effect of implantation of low-energy ions on the density of states of valence electrons in silicon, Radiotekhnika i Elektronika, 1997, 42(2), pp.240–242
Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of silicide films formed by low-energy implantation of metal ions into silicon, Radiotekhnika i Elektronika, 1997, 42(1), pp, 125–128