MATEMATIKA DARSLARIDA HOSILA MAVZUSINI O‘RGATISHDA ZAMONAVIY METODLARDAN FOYDALANISH. (“BLITS SAVOL-JAVOB USULIDA”)
Article Sidebar
Это произведение доступно по лицензии Creative Commons «Attribution» («Атрибуция») 4.0 Всемирная.
Main Article Content
Аннотация:
Mazkur maqolada matematika fanini o‘qitishda qo‘llanilgan yangi pedagogik texnologiyalar va uning ahamiyati , ularni dars jarayonida qo‘llashda erishilgan natijalar keltirilgan. Bugungi kunda fanlarni o‘qitishda eskirgan usullardan voz kechib, zamonaviy metodlardan foydalanib, boshqa fanlarga bog‘liqligini nazariy va amaliy jihatdan o‘quvchilarga tushuntirib berish eng katta maqsadimizga aylanib bormoqda. Hosila mavzusi ta’rif va jadval asosida yoritilib boriladi; Yig‘indining hosilasi, ayirmaning hosilasi, ko‘paytma va bo‘linmaning hosilalarini ta’rif yordamida tushuntirish nazarda tutilgan.
Article Details
Как цитировать:
Библиографические ссылки:
Ishmuhamedov R., Abduqodirov A., Pardaev A. Ta’lim va tarbiyada innovatsion texnologiyalar amaliyoti – T.: Iste’dod, 2010.- b.
Sh.A. Ayupov, B.A. Omirov, A.X. Xudoyberdiyev, F.N. Haydarov. Algebra va sonlar nazariyasi. Toshkent. «Tafakkur-bo‘stoni». 2019.
Ishmuhamadov R., Abduqodirov A., Pardayev A Ta’limda innovatsion texnologiyalar.-Toshkent 2008
Buxarkina M., Mosiyeva V. Ta’lim tizimida yangi pedagogik va axborot texnologiyalari. - M., 2000.
Dushaboyev O.N. Sinergetik yondashuv asosida talabalarning fazoviy tasavvurini rivojlantiris’h. Pedagogika fanlari bo‘yicha falsafa doktorlik diss. –Toshkent: 2022, 133 s.
Nasriddinov, S.S., Esbergenov, D.M. A Study of Complex Defect Formation in Silicon Doped With Nickel, Russian Physics Journal, 2023, 65(9), pp. 1559–1563, https://doi.org/10.1007/s11182-023-02801-x
Nasriddinov, S.S. Investigation of temperature sensors based on Si
, Journal of Nano- and Electronic Physics, 2015, 7(3), 03037
Rysbaev, A.S., Tashatov, A.K., Dzhuraev, S.X., Arzikulov, G., Nasriddinov, S.S. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon, Journal of Surface Investigation, 2011, 5(6), pp. 1193–1196, https://doi.org/10.1134/S1027451011100193
Bakhadyrkhanov, M.K., Valiev, S.A., Nasriddinov, S.S., Egamov, U. Features of thermal properties of strongly compensated Si, Inorganic Materials, 2009, 45(11), pp.1210–1212, https://doi.org/10.1134/S0020168509110028
Bakhadyrkhanov, M.K., Iliev, Kh.M., Tachilin, S.A., Nasriddinov, S.S., Abdurakhmanov, B.A. Impurity photovoltaic effect in silicon with multicharge Mn clusters, Applied Solar Energy (English translation of Geliotekhnika), 2008, 44(2), pp.132–134, https://doi.org/10.3103/S0003701X08020151
Normuradov, M.T., Tashatov, A.K., Rysbaev, A.S., ... Kholikov, Yu.D., Nasriddinov, S.S. Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions, Journal of Communications Technology and Electronics, 2007, 52(8), pp.898–900, https://doi.org/10.1134/S1064226907080104
Rysbaev, A.S., Nasriddinov, S.S., Normuradov, M.T., Umirzakov, B.E., Influence of high doze ion implantation of B and P on the state of the Si(111) surface, Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2002, 66(8), pp.1215–1219
Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of Silicide Films Formed by Low-Energy Implantation of Metal Ions into Silicon, Journal of Communications Technology and Electronics, 1997, 42(1), pp.114–117
Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S., The Effect of Implantation of Low-Energy Ions on the Density of States of Valence Electrons in Silicon, Journal of Communications Technology and Electronics, 1997, 42(2), pp.220–222
Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S. The effect of implantation of low-energy ions on the density of states of valence electrons in silicon, Radiotekhnika i Elektronika, 1997, 42(2), pp.240–242
Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of silicide films formed by low-energy implantation of metal ions into silicon, Radiotekhnika i Elektronika, 1997, 42(1), pp, 125–128