ДВУЯЗЫЧНОЕ ПОДХОД В СОЦИАЛИЗAЦИИ ДЕТЕЙ ДОШКОЛЬНОГО ВОЗРАСТА

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Аннотация:

В данной статье анализируется опыт отдельных программ двуязычного образования для детей раннего возраста и  конкретные последствия исследования для стратегий преподавания и обучения языку.

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Садикова, Ш. (2024). ДВУЯЗЫЧНОЕ ПОДХОД В СОЦИАЛИЗAЦИИ ДЕТЕЙ ДОШКОЛЬНОГО ВОЗРАСТА. Евразийский журнал академических исследований, 4(7 (Special Issue), 680–681. извлечено от https://in-academy.uz/index.php/ejar/article/view/35895

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Мы твердо продолжим путь демократических реформ на основе новой стратегии развития Узбекистана https://president.uz/uz/ 06.11.2021.

Послание Президента Республики Узбекистан Шавката Мирзиёева Олий Мажлису 24.01.2020. https://president.uz/uz/.

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Nasreddinova, K., & Sadikova, S. (2022). FEATURES OF THE DEVELOPMENT OF PRESCHOOL CHILDREN IN A BILINGUAL ENVIRONMENT. Science and innovation, 1(B7), 1440-1444.

Sadikova, S. A., Yakubova, Z. Z., Kayumova, D. N., Khalilova, D. F., & Kamalova, G. A. (2023). Preparing Children for Social Activity in Preschool Educational Organizations-Pedagogical Need. Journal of Advanced Zoology, 44, 1777-1784.

Sodiqova, S., & Yakubova, Z. (2022). O ‘QUV MASHG ‘ULOTLARINING TALABALARNI IJTIMOIY-PEDAGOGIK FAOLIYATGA TAYYORLASHDAGI O ‘RNI. Science and innovation, 1(B7), 855-859.

Sadikova, S., & Sultanmuratova, Y. (2022). THE IMPORTANCE OF TEACHING STREET SAFETY TO CHILDREN IN PRESCHOOL EDUCATIONAL INSTUTIONS. Science and innovation, 1(B7), 1519-1521.

Sadikova, S., & Abdusabirova, L. (2022). MAKTABGACHA TA’LIM TASHKILOTLARIDA TASVIRIY FAOLIYAT TURLARI VA MAZMUNI. Science and innovation, 1(B8), 760-764.

Nasriddinov, S.S., Esbergenov, D.M. A Study of Complex Defect Formation in Silicon Doped With Nickel, Russian Physics Journal, 2023, 65(9), pp. 1559–1563, https://doi.org/10.1007/s11182-023-02801-x

Nasriddinov, S.S. Investigation of temperature sensors based on Si

, Journal of Nano- and Electronic Physics, 2015, 7(3), 03037

Rysbaev, A.S., Tashatov, A.K., Dzhuraev, S.X., Arzikulov, G., Nasriddinov, S.S. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon, Journal of Surface Investigation, 2011, 5(6), pp. 1193–1196, https://doi.org/10.1134/S1027451011100193

Bakhadyrkhanov, M.K., Valiev, S.A., Nasriddinov, S.S., Egamov, U. Features of thermal properties of strongly compensated Si, Inorganic Materials, 2009, 45(11), pp.1210–1212, https://doi.org/10.1134/S0020168509110028

Bakhadyrkhanov, M.K., Iliev, Kh.M., Tachilin, S.A., Nasriddinov, S.S., Abdurakhmanov, B.A. Impurity photovoltaic effect in silicon with multicharge Mn clusters, Applied Solar Energy (English translation of Geliotekhnika), 2008, 44(2), pp.132–134, https://doi.org/10.3103/S0003701X08020151

Normuradov, M.T., Tashatov, A.K., Rysbaev, A.S., ... Kholikov, Yu.D., Nasriddinov, S.S. Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions, Journal of Communications Technology and Electronics, 2007, 52(8), pp.898–900, https://doi.org/10.1134/S1064226907080104

Rysbaev, A.S., Nasriddinov, S.S., Normuradov, M.T., Umirzakov, B.E., Influence of high doze ion implantation of B and P on the state of the Si(111) surface, Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2002, 66(8), pp.1215–1219

Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of Silicide Films Formed by Low-Energy Implantation of Metal Ions into Silicon, Journal of Communications Technology and Electronics, 1997, 42(1), pp.114–117

Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S., The Effect of Implantation of Low-Energy Ions on the Density of States of Valence Electrons in Silicon, Journal of Communications Technology and Electronics, 1997, 42(2), pp.220–222

Rysbaev, A.S., Normuradov, M.T., Yuldashev, Yu.Yu., Nasriddinov, S.S. The effect of implantation of low-energy ions on the density of states of valence electrons in silicon, Radiotekhnika i Elektronika, 1997, 42(2), pp.240–242

Rysbaev, A.S., Normuradov, M.T., Nasridinov, S.S., Adambaev, K.A. Properties of silicide films formed by low-energy implantation of metal ions into silicon, Radiotekhnika i Elektronika, 1997, 42(1), pp, 125–128