MODELING THE EFFECT OF TEMPERATURE ON SILICON-BASED SEMICONDUCTOR DEVICES

Аннотация:

The behavior of silicon-based semiconductor devices is significantly influenced by temperature. Temperature variations affect key parameters such as carrier mobility, bandgap energy, and recombination rates, thereby altering the current-voltage (I-V) characteristics. This study aims to model these effects and provide insights into the performance of silicon-based devices under varying thermal conditions. By incorporating temperature-dependent equations and numerical simulations, the study highlights the critical parameters that engineers must consider in device design and optimization.