ZNXSN1-XSE YUPQA QATLAMLARINI OLISH VA UNING AFZALLIKLARI

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Аннотация:

Bugungi kunda Si, a-Si, CdTe, Cu(In,Ga)(Se,S)2 amteriallari asosidagi quyosh elementlari tijoratlashtirilgan. Hozirda ularning samaradorligi quyidagi  qiymatga teng: Si uchun η = 26,7% (lab.), η=24,4%, (modul);  a-Si- η = 14% (lab.), η=12,3%, (modul)1; CdTe- η = 22,1% (lab.), η=19%, (modul)1; Cu(InGa)Se -  η = 23,4% (lab.), η=19%, (modul)[1]. Shuningdek, turli kompaniyalar tomonidan Si,  CdTe, Cu(InGa)Se quyosh elementlari asosida ma’lum quvvatli (310- 450Watt) quyosh modullari ishlab chiqarilmoqda[2]. Ishlab chiqarilayotgan quyosh modullarining 95% Si asosidagi quyosh modullariga to’g’ri keladi[2]. 2020 yilda  mono-Si asosidagi quyosh modulidan 120,6 GW, poli-Si asosidagi quyosh modulidan 23,3 GW va yupqa qatlamli quyosh modullaridan 7,7 GW  quvvatga teng fotoelektrik stantsiyalar qurilgan2. Ushbu fotoelektrik stantsiyalardan ishlab chiqarilayotgan elektr energiyasi, butun dunyoda ishlab chiqarilayotgan energiyaning 3,5% dan ortig’ini tashkil etadi[2].

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Как цитировать:

Matmuratov, A., & Kenjayev, B. (2024). ZNXSN1-XSE YUPQA QATLAMLARINI OLISH VA UNING AFZALLIKLARI. Молодые ученые, 2(8), 56–57. извлечено от https://in-academy.uz/index.php/yo/article/view/29314

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